SI4090DY

New Product N-Channel 100 V (D-S) MOSFET Si4090DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.0100 at VGS = 10 V 0.0105 at VGS = 7.5 V 0.0120 at VGS = 6.0 V ID (A)a 19.7 19.2 18 Qg (Typ.) 27.9 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS DC/DC Primary Side Switch Telecom/Server Motor Drive Control Synchronous Rectification G D Top View Ordering Information: Si4090DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 100 ± 20 19.7 15.8 13.2b, c 10.4b, c 70 7 3.1b, c 30 45 7.8 5 3.5b, c 2.2b, c - 55 to 150 S N-Channel MOSFET Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t  10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum und...