SI4056DY

New Product N-Channel 100 V (D-S) MOSFET Si4056DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.023 at VGS = 10 V 0.024 at VGS = 7.5 V 0.031 at VGS = 4.5 V SO-8 ID (A)a 11.1 10.8 9.5 Qg (Typ.) 9.7 nC S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4056DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS DC/DC Primary Side Switch Telecom/Server Industrial Synchronous Rectification G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 100 ± 20 11.1 8.8 7.3b, c 5.8b, c 70 5.1 2.2b, c 15 11.2 5.7 3.6 2.5b, c 1.6b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t  10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions...