IRF9910TRPBF-1

IRF9910TRPbF-1 VDS RDS(on) m ax Q1 (@VGS = 10V) RDS(on) m ax Q2 (@VGS = 10V) Qg (typical) Q1 Qg (typical) Q2 ID(@TA = 25°C)Q1 ID(@TA = 25°C)Q2 20 V 13.4 mΩ 9.3 7.4 15 nC 10 A 12 S2 1 G2 2 S1 3 G1 4 HEXFET® Power MOSFET 8 D2 7 D2 6 D1 5 D1 SO-8 Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF9910PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF9910TRPbF-1 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Q1 Max. Q2 Max. 20 ± 20 10 12 8.3 9.9 83 98 2.0 1.3 0.016 -55 to + 150 Units V A W W/°C °C Thermal Resistance Parameter RθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Notes  through … are on page 11 Typ. ––– ––– Max. 42 62.5 Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 I...