www.vishay.com
SiR640ADP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) (Ω) MAX. 0.0020 at VGS = 10 V 0.0025 at VGS = 4.5 V
ID (A) a 100 100
PowerPAK® SO-8 Single D
D8 D7 D6
5
Qg (TYP.) 28.5 nC
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information: SR640ADP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® power MOSFET
• Low Qg for high efficiency • 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Synchronous rectification • DC/DC converter • DC/AC inverter
G
D
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT 40 ± 20
100 a 100 a 41.6 b, c 33.3 b, c 350
94 5.6 b, c
40 80 104 66.6 6.25 b, c 4 b, c -55 to +150 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain)
t ≤ 10 s Steady State
RthJA RthJC
15 0.9
20 °C/W
1.2
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
S15-0073-Rev. B, 26-Jan-15
1
Document Number: 62870
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SiR640ADP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a Dynamic b
VDS ΔVGS(th)/TJ
VGS(th) IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA ID = 250 μA
VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V
VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Total Gate Charge
Ciss Coss Crss
Qg
VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A
Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics
Qgs Qgd Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
VDS = 20 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD IS = 5 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge Reverse Recovery Fall Time
Qrr ta
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
MIN. TYP. MAX. UNIT
40 - - V
- -4.6 - mV/°C
0.9 - 2 V
-
-
± 100
nA
- -1 μA
- - 10
30 - - A
- 0.00165 0.00200 Ω
- 0.00205 0.00250
- 82 -
S
- 4240 -
- 3930 -
- 230 -
- 60 90
- 28.5 43
- 9.6 -
- 5.1 -
0.4 1.2
2
- 17 34
- 6 12
- 44 85
- 8 16
- 38 75
- 70 140
- 42 80
- 12 24
pF nC Ω
ns
- - 94 A
- - 350 - 0.7 1.1 V - 79 160 ns - 80 160 nC - 22 -
ns - 57 -
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S15-0073-Rev. B, 26-Jan-15
2
Document Number: 62870
For technical questi.