SIE860DF

New Product N-Channel 30-V (D-S) MOSFET SiE860DF Vishay Siliconix PRODUCT SUMMARY ID (A) VDS (V) RDS(on) (Ω)e Silicon Package Limit Limit Qg (Typ.) 0.0021 at VGS = 10 V 178 30 0.0028 at VGS = 4.5 V 154 60a 34 nC 60a Package Drawing www.vishay.com/doc?68796 10 9 8 D GS 7 S PolarPAK 6 D6 7 8 9 10 D D S GD FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size Low Qgd/Qgs Ratio Helps Prevent Shoot-Through 100 % Rg and UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS VRM, POL DC/DC Conversion Synchronous Rectification Server D G D GS S 1 23 4 Top View D 5 54 32 1 Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE860DF-T1-E3 (Lead (Pb)-free) SiE860DF-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET For Related Documents www.vishay.com/ppg?68786 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS VGS 30 ± 20 V TC = 25 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Diss...