N-Channel 60-V (D-S) MOSFET
N-Channel 60-V (D-S) MOSFET
Si7370DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.011 at VGS = 10 V 60
0....
Description
N-Channel 60-V (D-S) MOSFET
Si7370DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.011 at VGS = 10 V 60
0.013 at VGS = 6 V
ID (A) 15.8 14.5
PowerPAK SO-8
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3 G
4
Bottom View
Ordering Information: Si7370DP-T1-E3 (Lead (Pb)-free) Si7370DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES Halogen-free According to IEC 61249-2-21
Available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested
APPLICATIONS Primary Side Switch for 24 V DC/DC Applications Secondary Synchronous Rectifier
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150°C)a Continuous Source Current
TA = 25 °C TA = 70 °C
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
60 ± 20 15.8 9.6 12.6 7.7 4.7 1.7 50 50 125 5.2 1.9 3.3 1.25 - 55 to 150 260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 s Steady State
RthJA
19 52
24 65 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.5
1.8
Notes a. Surface Mounted on ...
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