SI4590DY

www.vishay.com Si4590DY Vishay Siliconix N- and P-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY N-Channel P-Channel VDS (V) 100 -100 RDS(on) () MAX. 0.057 at VGS = 10 V 0.072 at VGS = 4.5 V 0.183 at VGS = -10 V 0.205 at VGS = -4.5 V ID (A) a Qg (TYP.) 5.6 4 5 -3.4 11.6 -3.2 SO-8 Dual D2 D2 5 D1 6 D1 7 8 FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS H bridge / DC-AC inverter - Brushless DC motors D1 S2 4 3 G2 2 S2 1 G1 S1 Top View Ordering Information: Si4590DY-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 N-Channel MOSFET S1 G2 P-Channel MOSFET D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (100 μs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current (100 μs Pulse Width) Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TF = 25 °C TF = 70 °C TA = 25 °C TA = 70 °C TF = 25 °C TA = 25 °C L = 0.1 mH TF = 25 °C TF = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS ISM IAS EAS PD TJ, Tstg 100 -100 ± 20 5.6 -3.4 4.5 -2.7 4.5 b,c -2.5 b,c 3.6 b,c -2 b,c 30 -20 3 -3.5 2 b,c -1.9 b,c 30 -20 5 -20 1.3 20 3.6 4.2 2.3 2.7 2.3 b,c 2.3 b,c 1.5 b,c 1.5 b,c -55 to 150 UNIT V ...