SI4288DY

Dual N-Channel 40 V (D-S) MOSFET Si4288DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.020 at VGS = 10 V 0.023 at VGS = 4.5 V ID (A)a 9.2 8.6 Qg (Typ.) 4.9 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFETPower MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS CCFL Inverter DC/DC Converter HDD D1 D2 G1 G2 Top View Ordering Information: Si4288DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS ISM IAS EAS PD TJ, Tstg Limit 40 ± 20 9.2 7.4 7.4b, c 5.9b, c 50 2.6 1.6b, c 50 10 5 3.1 2 2b, c 1.28b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t  10 s Steady-State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state condit...