TELEFUNKEN Semiconductors
BUF646 • BUF646A
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off...
TELEFUNKEN Semiconductors
BUF646 BUF646A
Silicon
NPN High Voltage Switching
Transistor
Features
D Simple-sWitch-Off
Transistor (SWOT) D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage
95 9630
Applications
Electronic lamp ballast circuits Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter Collector-emitter voltage
Test Conditions
Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range
xTcase 25°C
Type BUF646 BUF646A BUF646 BUF646A
Symbol
VCEO VCEO VCES VCES VEBO
IC ICM IB IBM Ptot Tj Tstg
Value 400 450 850 1000 9 7 14 3 5 70 150 –65 to +150
Unit V V V V V A A A A W °C °C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter Junction case
Test Conditions
Symbol RthJC
Value 1.78
Unit K/W
Rev. A1: 01.05.1995
1 (8)
BUF646 BUF646A
TELEFUNKEN Semiconductors
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Type Symbol Min Typ Max Unit
Collector cut-off current
VCE = 850 V VCE = 1000 V VCE = 850 V; Tcase = 150°C VCE = 1000 V; Tcase = 150°C
BUF646 BUF646A BUF646 BUF646A
ICES ICES ICES ICES
100 mA 100 mA 0.5 mA 0.5 mA
Collector-emitter breakdown voltage (figure 1)
IC = 500...