NDDL1N60Z

NDDL1N60Z, NDTL1N60Z Product Preview N-Channel Power MOSFET 600 V, 15 W Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage CStoenatdinyuSoutasteD, rTaCin=C2u5rr°eCnt(NRoqtJeC 1) Continuous Drain Current Steady State, TC = 100°C R(NqoJCte 1) Pulsed Drain Current, tp = 10 ms PStoewaedryDSitsastiep,aTtiCon=–2R5°qCJC Gate−to−Source Voltage Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.0 A) Peak Diode Recovery (Note 2) VDSS ID ID IDM PD VGS EAS dv/dt 600 0.8 0.3 V A 0.5 0.15 A 3.2 1.0 A 25 3 W ±30 V 60 mJ 4.5 V/ns Source Current (Body Diode) Lead Temperature for Soldering Leads IS 0.5 0.3 A TL 260 °C Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. IS = 1.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDDL1N60Z Junction−to−Ambient (Note 4) NDDL1N60Z (Note 3) NDDL1N60Z−1 (Note 4) NDTL1N60Z (Note 5) NDTL1N60Z RqJC RqJA 5 °C/W 50 °C/W 96 62 151 3. Insertion mounted. 4. ...