NDD60N360U1

NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Power Dissipation – RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C tp = 10 ms VDSS VGS ID PD IDM 600 V ±25 V 11 A 6.9 114 W 44 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 13 A Single Pulse Drain−to−Source Avalanche Energy (ID = 3.5 A) EAS 64 mJ RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 15) VISO −V Peak Diode Recovery (Note 1) dv/dt 15 V/ns Lead Temperature for Soldering Leads TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. ISD ≤ 13 A, di/dt ≤ 400 A/ms, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) Junction−to−Ambient Steady State (Note 3) NDD60N360U1 (Note 2) NDD60N360U1−1 (Note 2) NDD60N360U1−35G RqJC RqJA 2. Insertion mounted 3. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces) 1.1 °C/W °C/W 47 98 95 http://onse...