N-Channel Logic Level Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C320C3 Issued Date : 2013.08.23 Revised Date : Page No. : 1/7
N-Channel Logic Le...
Description
CYStech Electronics Corp.
Spec. No. : C320C3 Issued Date : 2013.08.23 Revised Date : Page No. : 1/7
N-Channel Logic Level Enhancement Mode MOSFET
MTN7002KC3 BVDSS ID RDSON@VGS=10V
Description
RDSON@VGS=4.5V
The MTN7002KC3 is a N-channel enhancement-mode MOSFET.
60V 230mA 1.2Ω typ.
1.8Ω typ.
Features
Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-free package
Symbol
MTN7002KC3 D
G
G:Gate S S:Source
D:Drain
Outline
SOT-523 D
GS
Ordering Information
Device MTN7002KC3
Package
SOT-523 (Pb-free)
Shipping 3000 pcs / Tape & Reel
Marking 72
MTN7002KC3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320C3 Issued Date : 2013.08.23 Revised Date : Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Drain Reverse Current
Continuous Pulsed
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
Symbol VDSS
VGSS ID IDP IDR IDRP PD
TCH Tstg
Limits
60
±20
230 800 230 800 150 1550 +150
-55~+150
*1
*1 *2 *3
Unit
V
V
mA mA mA mA mW V
°C °C
Thermal Characteristics
Parameter Thermal Resistance, Junction to Ambient
Symbol RθJA
Value 833 *2
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
Unit °C/W
Electrical C...
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