IRF530

IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.com TMOS POWER FET 14 AMPERES, 100 VOLTS RDS(on) = 0.140 W CASE 221A−09 TO-220AB D ® MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage — Continuous Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 mS) Total Power Dissipation @ TC = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD Operating and Storage Temperature Range TJ, Tstg UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain−to−Source A...