HBN1803M65

CYStech Electronics Corp. Octuple High Voltage NPN Epitaxial Planar Transistor HBN1803M65 Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 1/7 Description High breakdown voltage. (BVCEO=400V) Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA. Complementary to HBP1804M65 Pb-free lead plating and halogen-free package Equivalent Circuit HBN1803M65 Outline MISWB6×5-18L-A Top View Bottom View HBN1803M65 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 2/7 The following ratings and characteristics apply to each transistor in this device. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 500 400 5 300 1.5 150 -55~+150 Unit V V V mA W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. 500 400 5 - - 50 50 - Typ. - - 0.12 0.12 0.13 0.72 100 3.9 Max. 100 100 100 0.18 0.18 0.3 1 300 - Unit V V V nA nA nA V V V V MHz pF Test Conditions IC=50μA IC=1mA IE=50μA VCB=500V VCE=300V, REB=0Ω VEB=5V IC=20mA, IB=1mA IC=50mA, IB=5mA IC=100mA, IB=20mA IC=20mA, IB=2mA VCE=10V, IC=10mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=5MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty C...