CED30N08

CED30N08/CEU30N08 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 80V, 30A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS 80 VGS ±20 ID 30 19.5 IDM 120 57.7 PD 0.38 EAS 100 IAS 20 TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.2 50 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now Details are subject to change without notice . 1 Rev 1. 2014.Nov http://www.cetsemi.com CED30N08/CEU30N08 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Off Characteristics Symbol Test Condition Min Typ Max Units Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS...