Document
CES2321A
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package.
D
DS G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID -3.8 IDM -15.2
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 100
Units V V A A W C
Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 3. 2014.Feb http://www.cetsemi.com
CES2321A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF
IGSSR
VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V
-20
-1 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d
VGS(th) RDS(on)
VGS = VDS, ID = -250µA -0.4
-1.0 V
VGS = -4.5V, ID = -2.4A
44 55 mΩ
VGS = -2.5V, ID = -2.0A
55 75 mΩ
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d
Ciss Coss Crss
VDS = -10V, VGS = 0V, f = 1.0 MHz
755 140 105
pF pF pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = -10V, ID =-3.8A, VGS = -4.5V, RGEN = 3Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = -10V, ID = -3.8A, VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
21 19 37 12 7 1 2
ns ns ns ns nC nC nC
Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c
IS VSD
VGS = 0V, IS = -0.42A
-1 A -1.2 V
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
VTH, Normalized Gate-Source Threshold Voltage
C, Capacitance (pF)
-ID, Drain Current (A)
2.5
-VGS=4.5,3.0,2.5V 2.0
1.5
1.0
0.5 -VGS=1V
0 0.0 0.5 1.0 1.5 2.0 2.5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000 800
Ciss
600
400
200
0 Crss 02
Coss 46
8 10
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
3
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
-.