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CES2321A Dataheets PDF



Part Number CES2321A
Manufacturers CET
Logo CET
Description P-Channel MOSFET
Datasheet CES2321A DatasheetCES2321A Datasheet (PDF)

CES2321A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -3..

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CES2321A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -3.8 IDM -15.2 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 3. 2014.Feb http://www.cetsemi.com CES2321A Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V -20 -1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = -250µA -0.4 -1.0 V VGS = -4.5V, ID = -2.4A 44 55 mΩ VGS = -2.5V, ID = -2.0A 55 75 mΩ Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Ciss Coss Crss VDS = -10V, VGS = 0V, f = 1.0 MHz 755 140 105 pF pF pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = -10V, ID =-3.8A, VGS = -4.5V, RGEN = 3Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = -10V, ID = -3.8A, VGS = -4.5V Qgd Drain-Source Diode Characteristics and Maximun Ratings 21 19 37 12 7 1 2 ns ns ns ns nC nC nC Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c IS VSD VGS = 0V, IS = -0.42A -1 A -1.2 V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 VTH, Normalized Gate-Source Threshold Voltage C, Capacitance (pF) -ID, Drain Current (A) 2.5 -VGS=4.5,3.0,2.5V 2.0 1.5 1.0 0.5 -VGS=1V 0 0.0 0.5 1.0 1.5 2.0 2.5 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 800 Ciss 600 400 200 0 Crss 02 Coss 46 8 10 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 3 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) -.


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