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CED1185

Part Number	CED1185
Manufacturer	CET
Description	N-Channel MOSFET
Published	Feb 9, 2016
Detailed Description	CED1185/CEU1185 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 3.4A, RDS(ON) = 2.9 Ω @...
Datasheet	CED1185 PDF File

Overview

CED1185/CEU1185 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 3.
4A, RDS(ON) = 2.
9 Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 800 ±30 3.
4 13.
6 83 0.
7 Single Pulsed Avalanche Energy d EAS 331 Single Pulsed Av...

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