CEF840A

CEP840A/CEB840A CEF840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840A CEB840A CEF840A VDSS 500V 500V 500V RDS(ON) 0.85Ω 0.85Ω 0.85Ω ID 8.5A 8.5A 8.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a VDS VGS ID IDM e 500 ±30 8.5 6 34 8.5 d 6d 34 d Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 150 48 PD 1 0.3 Single Pulsed Avalanche Energy h EAS 196 Single Pulsed Avalanche Current h IAS 7.5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1 62.5 3.1 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.Nov http://www.cetsemi.com CEP840A/CEB840A CEF840A Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ...