CEP840A/CEB840A
CEF840A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP840A CEB840...
CEP840A/CEB840A
CEF840A
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP840A CEB840A CEF840A
VDSS 500V 500V
500V
RDS(ON) 0.85Ω 0.85Ω
0.85Ω
ID 8.5A 8.5A 8.5A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
VDS VGS
ID IDM e
500
±30
8.5 6 34
8.5 d 6d 34 d
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
150 48 PD 1 0.3
Single Pulsed Avalanche Energy h
EAS 196
Single Pulsed Avalanche Current h
IAS 7.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1 62.5
3.1 65
Units
V V A A A W W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2011.Nov http://www.cetsemi.com
CEP840A/CEB840A CEF840A
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ...