Document
CEP85N75V/CEB85N75V
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 75
VGS ±30
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
ID IDM
85 59 340
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
200 1.33
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
880 45 -55 to 175
Units V V A A A W
W/ C
mJ A
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Limit 0.75 62.5
Units C/W C/W
Rev 1. 2012.Aug http://www.cetsemi.com
CEP85N75V/CEB85N75V
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 75V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 12V, ID = 40A VGS = 10V, ID = 40A
Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 37.5V, ID = 45A, VGS = 10V, RGEN = 4.7Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 60V, ID = 75A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
IS VSD
VGS = 0V, IS = 40A
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25Ω, Starting TJ = 25 C . e .Pulse width limited by safe operating area .
Min 75
3
Typ
10 10.5
3450 670
3
32 7 54 13 64 18 13
Max Units
1 100 -100
V µA nA nA
5V 12 mΩ 13 mΩ
pF pF pF
ns ns ns ns nC nC nC
85 A 1.5 V
2
ID, Drain Current (A)
C, Capacitance (pF)
CEP85N75V/CEB85N75V
50
VGS=10,9,8,7V 40
120 100
ID, Drain Current (A)
30 75
20 VGS=6V
10
0 0 1.5
3 4.5
6
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
50
25
0 0.