CEP6036/CEB6036
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 135A, RDS(ON) = 4.6mΩ @V...
CEP6036/CEB6036
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
ID
135 95
Drain Current-Pulsed a
IDM 540
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
167 1.1
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
400 40 -55 to 175
Units V V A A A W
W/ C mJ A
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.9 62.5
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2012.Jun http://www.cetsemi.com
CEP6036/CEB6036
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS...