N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE01H29TC
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H2...
Description
http://www.ncepower.com
Pb Free Product
NCE01H29TC
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H29TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications.
General Features
● VDSS =100V,ID =290A RDS(ON) < 3.2mΩ @ VGS=10V (Typ:2.7mΩ)
● Good stability and uniformity with high EAS ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Schematic diagram
Application
● DC motor drive ● High efficiency synchronous rectification in SMPS ● Uninterruptible power supply ● High speed power switching ● Hard switched and high frequency circuits
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01H29TC
NCE01H29TC
TO-247
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor
Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4)
EAS dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100 ±20 290 200 1120 460 3.07 3500 10 -55 To 175
Unit
V V A A A W W/℃ mJ V/ns ℃
Wuxi...
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