2SK4094

Ordering number : ENA0523B 2SK4094 N-Channel Power MOSFET 60V, 100A, 5mΩ, TO-220-3L http://onsemi.com Features ON-resistance RDS(on)1=3.8mΩ (typ.) Input capacitance Ciss=12500pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 100 400 1.75 90 150 --55 to +150 850 70 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7536-001 10.0 3.6 4.5 1.3 2SK4094-1E Product & Package Information Package : TO-220-3L JEITA, JEDEC : SC-46, TO-220AB Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2.8 15.7 3.0 9.2 1.3 (1.7) (0.6) 8.9 MAX 1.52 1.27 0.8 123 2.54 2.54 2.4 13.08 0.5 1 : Gate 2 : Drain 3 : Source TO-220-3L 13.3 K4094 LOT No. 2 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/12512 TKIM ...