2SC2814

Ordering number : ENN693F 2SC2814 NPN Epitaxial Planar Silicon Transistors High-Friquency General-Purpose Amplifier Applications Features · Ultrasmall package enabiling compactness and slimness of sets. · High fT and small cre (fT=320MHz typ, cre=0.95pF typ). Package Dimensions unit:mm 2018B [2SC2814] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 0.5 1 0.95 0.95 2 1.9 2.9 0.8 1.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Base-to-Collector Time Constant Noise Figure Power Gain ICBO IEBO hFE fT Cre rbb'CC NF PG * : The 2SC2814 are classified as follows by hFE at 1mA : (Note) Marking : F hFE rank : 2, 3, 4, 5 Conditions Conditions VCB=10V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, f=1MHz VCE=6V, IC=1mA, f=31.9MHz VCE=6V, IC=1mA, f=100MHz VCE=6V, IC=1mA, f=100MHz Rank hFE 2 40 to 80 3 60 to 120 1 : Base 2 : Emitter 3 : Collector SANYO : CP Ratings 30 20 5 30 150 125 –55 to +125 Unit V V V mA mW ˚C ˚C Ratings min typ 40* 200 320 0.7 0.95 12 3.0 25 max 0.1 0.1 270* 1.2 20 Unit μA μA MHz pF ps dB dB 45 90 to 180 135 to 270 © 2011, SCILLC. All rights reserved. Jan...