SEMICONDUCTOR
TECHNICAL DATA
KF10N50P/F/PZ/FZ
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar s...
SEMICONDUCTOR
TECHNICAL DATA
KF10N50P/F/PZ/FZ
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL KF10N50P KF10N50F UNIT
KF10N50PZ KF10N50FZ
Drain-Source Voltage
VDSS 500 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID
IDP EAS EAR dv/dt
10 10* 5 5* 25 25*
300
14.7
4.5
A
mJ mJ V/ns
Drain Power Dissipation
Tc=25 Derate above 25
PD
130 1.04
41.5 W 0.33 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RthJC RthJA
0.96 62.5
3.0 /W 62.5 /W
* : Drain current limited by maximum junction temperature.
Q
K
KF10N50P,KF10N50PZ
A
E
I K
M D
NN
F G
B Q
L J
O C
P H
123
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5 J 13.08 +_ 0.3
K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4...