KF10N50PZ

SEMICONDUCTOR TECHNICAL DATA KF10N50P/F/PZ/FZ N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF10N50P KF10N50F UNIT KF10N50PZ KF10N50FZ Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 10 10* 5 5* 25 25* 300 14.7 4.5 A mJ mJ V/ns Drain Power Dissipation Tc=25 Derate above 25 PD 130 1.04 41.5 W 0.33 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.96 62.5 3.0 /W 62.5 /W * : Drain current limited by maximum junction temperature. Q K KF10N50P,KF10N50PZ A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7 H 0.5+0.1/-0.05 I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4...