DatasheetsPDF.com

STI22NM60N Dataheets PDF



Part Number STI22NM60N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STI22NM60N DatasheetSTI22NM60N Datasheet (PDF)

STI22NM60N Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFET in I²PAK package Features TAB ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STI22NM60N 650 V 0.22 Ω 16 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh.

  STI22NM60N   STI22NM60N



Document
STI22NM60N Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFET in I²PAK package Features TAB ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STI22NM60N 650 V 0.22 Ω 16 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. roduc Product status te P STI22NM60N le Product summary so Order code STI22NM60N ObMarking 22NM60N Package I2PAK Packing Tube DS12574 - Rev 1 - May 2018 For further information contact your local STMicroelectronics sales office. www.st.com STI22NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 16 A ID Drain current (continuous) at TC = 100 °C ) IDM (1) Drain current (pulsed) t(s PTOT Total dissipation at TC = 25 °C uc dv/dt (2) Peak diode recovery voltage slope d Tj Operating junction temperature range ro Tstg Storage temperature range te P 1. Pulse width limited by safe operating area. le 2. ISD ≤ 16 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Obso Symbol ) - Rthj-case t(s Rthj-amb Table 2. Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient Produc Symbol te IAR ObsoleEAS Table 3. Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 10 64 125 15 -55 to 150 Value 1 62.5 Value 6 300 A A W V/ns °C Unit °C/W °C/W Unit A mJ DS12574 - Rev 1 page 2/13 STI22NM60N Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown voltage ID = 1 mA, VGS = 0 V ct(s) IDSS rodu IGSS P VGS(th) lete RDS(on) Zero gate voltage drain current Gate body leakage current Gate threshold voltage Static drain-source on resistance VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V TC = 125 °C(1) VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 8 A o 1. Defined by design, not subject to production test. ) - Obs Symbol t(s Ciss uc Coss d Crss ro Coss eq. (1) te P Rg leQg o Qgs Obs Qgd Table 5. Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V Gate input resistance f = 1 MHz open drain Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 16 A, VGS = 0 to 10 V (see Figure 13. Test circuit for gate charge behavior) 600 2 Min. - 3 0.20 Typ. 1330 84 4.6 181 4.7 44 6 25 1 100 100 4 0.22 Max. - - V µA µA nA V Ω Unit pF pF Ω nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol td(on) tr(v) td(off) tf(i) Parameter Turn-on delay time Voltage rise time Turn-off delay time Fall time Table 6. Switching times Test conditions Min. Typ. Max. Unit VDD = 300 V, ID = 8 A, 11 RG = 4.7 Ω, VGS = 10 V 18 (see Figure 12. Test circuit for - 74 - ns resistive load switching times and Figure 17. Switching time waveform) 38 DS12574 - Rev 1 page 3/13 STI22NM60N Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) Source-drain current Source-drain current (pulsed) 16 - A 64 VSD (2) Forward on voltage ISD = 16 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 16 A, di/dt = 100 V 296 ns Qrr Reverse recovery charge VDD = 60 V (see Figure 14. Test circuit for inductive - 4 ) IRRM Reverse recovery current load switching and diode recovery times) 26.8 t(s trr Reverse recovery time ISD = 16 A, di/dt = 100 A/µs 350 uc Qrr Reverse recovery charge VDD = 60 V (see Figure d 14. Test circuit for inductive - 4.7 ro IRRM Reverse recovery current load switching and diode recovery times) 27 P 1. Pulse width limited by safe operating area. Obsolete Product(s) - Obsolete 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. μC A ns μC A DS12574 - Rev 1 page 4/13 STI22NM60N Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area ID AM06401v1 (A) Figure 2. Thermal impedance LiOmipteerdatiboyn imanxthiRsD.


SQJ858AEP STI22NM60N 22NM60N


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)