Document
STI22NM60N
Datasheet
N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFET in I²PAK package
Features
TAB
ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab
Order code
VDS @ Tjmax.
RDS(on)max.
ID
STI22NM60N
650 V
0.22 Ω
16 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
roduc Product status te P STI22NM60N
le Product summary
so Order code
STI22NM60N
ObMarking
22NM60N
Package
I2PAK
Packing
Tube
DS12574 - Rev 1 - May 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
STI22NM60N
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
16
A
ID
Drain current (continuous) at TC = 100 °C
) IDM (1)
Drain current (pulsed)
t(s PTOT
Total dissipation at TC = 25 °C
uc dv/dt (2) Peak diode recovery voltage slope
d Tj
Operating junction temperature range
ro Tstg
Storage temperature range
te P 1. Pulse width limited by safe operating area. le 2. ISD ≤ 16 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Obso Symbol ) - Rthj-case t(s Rthj-amb
Table 2. Thermal data Parameter
Thermal resistance junction-case Thermal resistance junction-ambient
Produc Symbol te IAR ObsoleEAS
Table 3. Avalanche characteristics Parameter
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
10 64 125 15 -55 to 150
Value 1
62.5
Value 6
300
A A W V/ns °C
Unit °C/W °C/W
Unit A mJ
DS12574 - Rev 1
page 2/13
STI22NM60N
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source Breakdown voltage
ID = 1 mA, VGS = 0 V
ct(s) IDSS rodu IGSS P VGS(th) lete RDS(on)
Zero gate voltage drain current
Gate body leakage current Gate threshold voltage Static drain-source on resistance
VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V TC = 125 °C(1) VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 8 A
o 1. Defined by design, not subject to production test.
) - Obs Symbol t(s Ciss uc Coss d Crss ro Coss eq. (1) te P Rg leQg o Qgs Obs Qgd
Table 5. Dynamic
Parameter
Test conditions
Input capacitance Output capacitance Reverse transfer capacitance
VDS = 50 V, f = 1 MHz, VGS = 0 V
Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V
Gate input resistance
f = 1 MHz open drain
Total gate charge Gate-source charge Gate-drain charge
VDD = 480 V, ID = 16 A, VGS = 0 to 10 V (see Figure 13. Test circuit for gate charge behavior)
600
2
Min. -
3 0.20
Typ. 1330
84 4.6 181 4.7 44 6 25
1 100 100
4 0.22
Max.
-
-
V µA µA nA V Ω
Unit pF pF Ω nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Symbol td(on) tr(v) td(off)
tf(i)
Parameter Turn-on delay time Voltage rise time Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
Min.
Typ.
Max.
Unit
VDD = 300 V, ID = 8 A,
11
RG = 4.7 Ω, VGS = 10 V
18
(see Figure 12. Test circuit for
-
74
-
ns
resistive load switching times
and Figure 17. Switching time waveform)
38
DS12574 - Rev 1
page 3/13
STI22NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD ISDM (1)
Source-drain current Source-drain current (pulsed)
16
-
A
64
VSD (2)
Forward on voltage
ISD = 16 A, VGS = 0 V
-
1.6
V
trr
Reverse recovery time
ISD = 16 A, di/dt = 100 V
296
ns
Qrr
Reverse recovery charge
VDD = 60 V (see Figure
14. Test circuit for inductive
-
4
) IRRM
Reverse recovery current
load switching and diode recovery times)
26.8
t(s trr
Reverse recovery time
ISD = 16 A, di/dt = 100 A/µs
350
uc Qrr
Reverse recovery charge
VDD = 60 V (see Figure
d 14. Test circuit for inductive
-
4.7
ro IRRM
Reverse recovery current
load switching and diode recovery times)
27
P 1. Pulse width limited by safe operating area. Obsolete Product(s) - Obsolete 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
μC A ns μC A
DS12574 - Rev 1
page 4/13
STI22NM60N
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1. Safe operating area
ID
AM06401v1
(A)
Figure 2. Thermal impedance
LiOmipteerdatiboyn imanxthiRsD.