Automotive N-Channel MOSFET
www.vishay.com
SQJ858AEP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(o...
Description
www.vishay.com
SQJ858AEP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
PowerPAK® SO-8L Single
40 0.0063 0.0075
58 Single
D
FEATURES TrenchFET® Power MOSFET
AEC-Q101 Qualified
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
6.15 mm
5.13 mm
4 G
3 S
2 S
1 S
D
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
G
S N-Channel MOSFET
PowerPAK SO-8L SQJ858AEP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction) Pulsed Drain Currenta
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationa
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
LIMIT 40 ± 20 58 33 43 230 35 61 48 16
- 55 to + 175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient Junction-to-Case (Drain)
PCB Mountb
RthJA
85
°C/W
RthJC
3.1
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. d. See solder profile (www.vishay.com/doc?...
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