IGC142T120T6RH

IGC142T120T6RH IGBT4 High Power Chip FEATURES: 1200V Trench + Field Stop technology low VCEsat soft turn off positive temperature coefficient easy paralleling This chip is used for: medium / high power modules Applications: medium / high power drives C G E Chip Type VCE ICn Die Size IGC142T120T6RH 1200V 150A 11.31 x 12.56 m m2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 11.31 x 12.56 11.04 x 9.80 1.31 x 0.81 mm 2 142.1 / 113.1 140 µm 150 mm 90 grd 94 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1, 31.10 .2007 IGC142T120T6RH MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Emitter voltage , Tj=25 °C DC collector current, limited by Tjmax VC E IC 1200 1) V A Pulsed collector current, tp limited by Tjmax Gate -Emitter voltage Ic p u l s VGE 450 A ±20 V Operating junction temperature Tj -40 ... +175 °C Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C tp 10 µs Reverse bias safe operat...