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BSZ15DC02KDH

Infineon

Small Signal Transistor

OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor Features Product Summary · Complementary P + N channel · Enhancemen...


Infineon

BSZ15DC02KDH

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OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor Features Product Summary · Complementary P + N channel · Enhancement mode · Super Logic level (2.5V rated) · Common drain · Avalanche rated VDS RDS(on),max ID VGS=±4.5 V VGS=±2.5 V · 175 °C operating temperature · Qualified according to AEC Q101 · 100% lead-free; RoHS compliant · Halogen-free according to IEC61246-21 BSZ15DC02KD H PN -20 20 V 150 55 mW 310 95 -3.2 5.1 A Type BSZ15DC02KD H Package PG-TSDSON-8 Marking 15DC02KD Lead Free Yes Maximum ratings, at T j=25 °C, unless otherwise specified 1) Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation ID I D,pulse E AS V GS P tot 2) T A=25 °C T A=100 °C T A=25 °C P: I D=-3.2 A, N: I D=5.1 A, R GS=25 W T A=25 °C Halogen Free Yes Packing Non dry Value PN -3.2 5.1 -2.2 3.6 -13 20 11 11 ±12 2.5 Unit A mJ V W Operating and storage temperature T j, T stg -55 ... 175 °C ESD class Soldering temperature T solder IEC climatic category; DIN IEC 68-1 1) Remark: only one of both transistors active JESD22-A114-HBM 0 (<250V) 260 55/175/56 °C Rev 2.2 page 1 2014-08-28 BSZ15DC02KD H Parameter Thermal characteristics Thermal resistance, junction case Device on PCB Symbol Conditions min. Values typ. Unit max. P R thJC N R thJA 6 cm2 cooling area2) - - 8 K/W - 60 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics D...




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