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SiHFPS40N60K Dataheets PDF



Part Number SiHFPS40N60K
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SiHFPS40N60K DatasheetSiHFPS40N60K Datasheet (PDF)

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 330 84 150 Single 0.110 D Super-247 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • En.

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IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 330 84 150 Single 0.110 D Super-247 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Hard Switching Primary or PFC Switch • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • Motor Drive Super-247 IRFPS40N60KPbF SiHFPS40N60K-E3 IRFPS40N60K SiHFPS40N60K ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.84 mH, Rg = 25 , IAS = 38 A, dV/dt = 5.5 V/ns (see fig. 12a). c. ISD  38 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 600 ± 30 40 24 160 4.5 600 40 57 570 7.5 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91261 S11-0112-Rev. B, 31-Jan-11 www.vishay.com 1 IRFPS40N60K, SiHFPS40N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) RthJA RthCS RthJC TYP. - 0.24 - MAX. 40 0.22 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 24 Ab VDS = 50 V, ID = 24 Ab Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Output Capacitance Coss Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V VDS = 1.0 V , f = 1.0 MHz VDS = 480 V , f = 1.0 MHz VDS = 0 V to 480 Vc ID = 38 A, VDS = 480 V, see fig. 6 and 13b VGS = 10 V VDD = 300 V, ID = 38 A, RG = 4.3 , see fig. 10b MIN. 600 - 3.0 21 - TYP. MAX. UNIT 0.63 0.110 - 5.0 ± 100 50 250 0.130 - V V/°C V nA μA  S 7970 750 75 9440 200 260 47 110 97 60 330 84 150 - pF nC ns Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse Pulsed Diode Forward Currenta ISM p - n junction diode D G S - - 40 A - - 160 Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Body Diode Recovery Current VSD trr Qrr IRRM TJ = 25 °C, IS = 38 A, VGS = 0 Vb - - 1.5 V TJ = 25 °C - 630 950 ns TJ = 125 °C IF = 38 A, dI/dt = 100 - 730 1090 TJ = 25 °C A/μs - 14 20 μC TJ = 125 °C - 17 25 TJ = 25 °C - 39 58 A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91261 S11-0112-Rev. B, 31-Jan-11 IRFPS40N60K, SiHFPS40N60K Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID, Drain-to-Source Current (A) 1000 100 10 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 0.1 4.5V 0.01 0.001 0.1 20μs PULSE WIDTH Tj = 25°C 1 10 100 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics I D, Drain-to-Source Current (A) 1000 100 TJ= 150 °C 10 TJ= 25 °C 1 0.1 0.01 4 V DS= 50V 20μs PULSE WIDTH 6 8 10 11 V GS, Gate-to-Source Voltage (V) 13 15 Fig. 3 - Typical Transfer Characteristics ID, Drain-to-Source Current (A) 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 10 5.0V BOTTOM 4.5V 1 4.5V 0.1 0.1 20μs PUL.


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