Document
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
330 84 150 Single
0.110
D
Super-247
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Enhanced Body Diode dV/dt Capability
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Hard Switching Primary or PFC Switch • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • Motor Drive
Super-247 IRFPS40N60KPbF SiHFPS40N60K-E3 IRFPS40N60K SiHFPS40N60K
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.84 mH, Rg = 25 , IAS = 38 A, dV/dt = 5.5 V/ns (see fig. 12a). c. ISD 38 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
LIMIT 600 ± 30 40 24 160 4.5 600 40 57 570 7.5
- 55 to + 150 300d
UNIT V
A
W/°C mJ A mJ W V/ns °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91261 S11-0112-Rev. B, 31-Jan-11
www.vishay.com 1
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)
RthJA RthCS RthJC
TYP. -
0.24 -
MAX. 40 0.22
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 24 Ab
VDS = 50 V, ID = 24 Ab
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
Output Capacitance
Coss
Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics
Coss eff. Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz VDS = 480 V , f = 1.0 MHz
VDS = 0 V to 480 Vc
ID = 38 A, VDS = 480 V, see fig. 6 and 13b
VGS = 10 V
VDD = 300 V, ID = 38 A, RG = 4.3 , see fig. 10b
MIN.
600 -
3.0 21
-
TYP. MAX. UNIT
0.63
0.110 -
5.0 ± 100 50 250 0.130 -
V V/°C
V nA
μA
S
7970 750 75 9440 200 260
47 110 97 60
330 84 150 -
pF nC ns
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G S
- - 40 A
- - 160
Body Diode Voltage Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge Body Diode Recovery Current
VSD trr
Qrr IRRM
TJ = 25 °C, IS = 38 A, VGS = 0 Vb
- - 1.5 V
TJ = 25 °C
- 630 950 ns
TJ = 125 °C
IF = 38 A, dI/dt = 100
-
730 1090
TJ = 25 °C
A/μs
- 14 20 μC
TJ = 125 °C
- 17 25
TJ = 25 °C
- 39 58 A
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
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Document Number: 91261 S11-0112-Rev. B, 31-Jan-11
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
ID, Drain-to-Source Current (A)
1000 100 10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
4.5V
0.01
0.001 0.1
20μs PULSE WIDTH Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics
I D, Drain-to-Source Current (A)
1000
100 TJ= 150 °C 10
TJ= 25 °C 1
0.1
0.01 4
V DS= 50V 20μs PULSE WIDTH
6 8 10 11
V GS, Gate-to-Source Voltage (V)
13
15
Fig. 3 - Typical Transfer Characteristics
ID, Drain-to-Source Current (A)
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
10 5.0V
BOTTOM 4.5V
1
4.5V
0.1 0.1
20μs PUL.