C5038

C5038 Silicon NPN transistor epitaxial type C5038 [ Applications ] High-frequency amplification Oscillation Mixing [ Feature ] High transition frequency fT= 650MHz(min.) Low output capacitance Cob= 0.7pF(typ.) High gain [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Maximum ratings Collector-base voltage VCBO 30 Collector-emitter voltage VCEO 25 Emitter-base voltage VEBO 3 Collector current IC 50 Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Unit V V V mA C C [ Electrical characteristics (Ta=25C) ] Characteristic Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 - - V IC= 100uA, IE= 0A Collector-emitter breakdown voltage BVCEO 25 - - V IC= 1mA, IB= 0A Emitter-base breakdown voltage BVEBO 3 - - V IE= 10uA, IC= 0A Collector cut-off current ICBO - - 100 nA VCB= 25V, IE= 0A Emitter cut-off current IEBO - - 100 nA VEB= 2V, IC= 0A DC current gain hFE 110 - - VCE= 10V, IC= 4mA Collector-emitter saturation voltage VCE(sat) - - 0.5 V IC= 4mA, IB= 0.4mA Transition frequency f T 650 - - MHz VCE= 10V, IE= -4mA Collector output capacitance Cob - 0.7 - pF VCB= 10V, f = 1MHz, IE= 0A Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only. Notice 2) The contents described herein are subject to change without notice. No. C5038-20120209 PHENITEC SEMICONDUCTOR Corp. - 1/2 - Collector current : IC (mA) Fig.1 VBE(o...