N-Channel Power MOSFET
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bri...
Description
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant
StrongIRFET™ IRL7472L1TRPbF
DirectFET® N-Channel Power MOSFET
VDSS
RDS(on) typ. max
@ VGS = 10V
RDS(on) typ.
max @ VGS = 4.5V ID (Silicon Limited)
40V 0.34m 0.59m 0.52m 0.97m 564A
D
S
S
S G
S
L8
S S
D S S
DirectFET™ ISOMETRIC
Base part number
Package Type
IRL7472L1PbF Direct FET Large Can (L8)
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRL7472L1TRPbF
RDS(on), Drain-to -Source On Resistance ( m) ID, Drain Current (A)
1.6 ID = 195A
1.4
1.2
1.0
0.8 TJ = 125°C 0.6
0.4
0.2 TJ = 25°C 0.0
2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
600 500 Limited by package
400
300
200
100
0 25
50 75 100 125 150 TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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February 25, 2015
IRL7472L1TRPbF
Absolute Maximum Ratings
Symbol
...
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