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IRL7472L1PbF

International Rectifier

N-Channel Power MOSFET

Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bri...


International Rectifier

IRL7472L1PbF

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Description
Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant StrongIRFET™ IRL7472L1TRPbF DirectFET® N-Channel Power MOSFET  VDSS RDS(on) typ. max @ VGS = 10V RDS(on) typ. max @ VGS = 4.5V ID (Silicon Limited) 40V 0.34m 0.59m 0.52m 0.97m 564A   D S S S G S L8 S S D S S   DirectFET™ ISOMETRIC Base part number Package Type IRL7472L1PbF Direct FET Large Can (L8) Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRL7472L1TRPbF RDS(on), Drain-to -Source On Resistance ( m) ID, Drain Current (A) 1.6 ID = 195A 1.4 1.2 1.0 0.8 TJ = 125°C 0.6 0.4 0.2 TJ = 25°C 0.0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 600 500 Limited by package 400 300 200 100 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback February 25, 2015    IRL7472L1TRPbF Absolute Maximum Ratings Symbol ...




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