BAW62

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product data sheet Supersedes data of April 1996 1996 Sep 17 NXP Semiconductors High-speed diode Product data sheet BAW62 FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 75 V Repetitive peak forward current: max. 450 mA. APPLICATIONS High-speed switching Fast logic applications. DESCRIPTION The BAW62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. handbook, halfpagke a MAM246 The diode is type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature CONDITIONS see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 μs t = 1 ms t=1s Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. MIN. − − − − MAX. 75 75 250 450 UNIT V V mA mA − 4A − 1A − 0.5 A − 350 mW −65 +200 °C − 200 °C 1996 Sep 17 2 NXP Semiconductors High-speed diode Product data sheet B...