N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
ZXMS6004DT8Q
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET
Product Summary
C...
Description
ADVANCE INFORMATION
ZXMS6004DT8Q
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET
Product Summary
Continuous Drain Source Voltage VDS = 60V
On-State Resistance
500mΩ
Nominal Load Current (VIN = 5V)
1.2A
Clamping Energy
210mJ
Description
The ZXMS6004DT8Q is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004DT8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
Applications
Two completely isolated independent channels Especially suited for loads with a high in-rush current such as
lamps and motors All types of resistive, inductive and capacitive loads in switching
applications
μC compatible power switch for 12V and 24V DC applications.
Automotive rated Replaces electromechanical relays and discrete circuits Linear Mode capability - the current-limiting protection circuitry is
designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS.
SM-8
Features and Benefits
Compact Dual Package Low Input Current Logic Level Input (3.3V and 5V) Short Circuit ...
Similar Datasheet