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ZXMS6004DT8Q

Diodes

N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary  C...


Diodes

ZXMS6004DT8Q

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Description
ADVANCE INFORMATION ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary  Continuous Drain Source Voltage VDS = 60V  On-State Resistance 500mΩ  Nominal Load Current (VIN = 5V) 1.2A  Clamping Energy 210mJ Description The ZXMS6004DT8Q is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004DT8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Applications  Two completely isolated independent channels  Especially suited for loads with a high in-rush current such as lamps and motors  All types of resistive, inductive and capacitive loads in switching applications  μC compatible power switch for 12V and 24V DC applications.  Automotive rated  Replaces electromechanical relays and discrete circuits  Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS. SM-8 Features and Benefits  Compact Dual Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit ...




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