DatasheetsPDF.com

ZXMS6003GQ

Diodes

N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION   Green ZXMS6003GQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET®MOSFET WITH PROGRAMMA...


Diodes

ZXMS6003GQ

File Download Download ZXMS6003GQ Datasheet


Description
ADVANCE INFORMATION   Green ZXMS6003GQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET®MOSFET WITH PROGRAMMABLE CURRENT LIMIT Product Summary Continuous Drain Source Voltage VDS = 60V On-State Resistance 500mΩ Nominal Load Current (VIN = 5V) 1.4A Clamping Energy 550mJ Description Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch, with status indication and programmable current limit. Applications Especially suited for loads with a high in-rush current such as lamps and motors All types of resistive, inductive and capacitive loads in switching applications μC compatible power switch for 12V and 24V DC applications. Automotive rated Replaces electromechanical relays and discrete circuits Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS, in order not to compromise the load current during normal operation. The design max. DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. Note: This does not compromise the product's ability to selfprotect during short-circuit load conditions The current limit is programmable via an external resistor Rprog connected between Status and IN pins Status pin voltage reflects the gate drive being applied internally to the powe...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)