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ZXMS6002GQ

Diodes

N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION ZXMS6002GQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET WITH STATUS INDICATION...


Diodes

ZXMS6002GQ

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ADVANCE INFORMATION ZXMS6002GQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET WITH STATUS INDICATION Product Summary  Continuous Drain Source Voltage VDS= 60V  On-State Resistance 500mΩ  Nominal Load Current (VIN = 5V) 1.4A  Clamping Energy 550mJ Description Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch, with status indication and programmable current limit. Applications  Especially suited for loads with a high in-rush current such as lamps and motors  All types of resistive, inductive and capacitive loads in switching applications  μC compatible power switch for 12V and 24V DC applications  Automotive rated  Replaces electromechanical relays and discrete circuits  Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS, in order not to compromise the load current during normal operation. The design max. DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry.  Note: This does not compromise the product's ability to self- protect during short-circuit load conditions.  Status pin voltage reflects the gate drive being applied internally to the power MOSFET.  With VIN = 5V:  Status voltage ~ 5V indicates normal operation  Status voltage ~ (2-3)V indicates that th...




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