Document
ADVANCED INFORMATION
Green
DMTH6010LPSQ
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 60V
RDS(ON)
8mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V
ID TC = +25°C (Note 10)
100A
85A
Description and Applications
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Engine Management Systems Body Control Electronics DC-DC Converters
PowerDI5060-8
Features
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Mechanical Data
Case: PowerDI®5060-8 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate)
Pin1
S
D
S
D
S
D
G
D
Top View
Bottom View
Internal Schematic
Top View Pin Configuration
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMTH6010LPSQ-13
PowerDI5060-8
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
DDDD
H6010LS
YY WW
=Manufacturer’s Marking H6010LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 19 = 2019) WW = Week Code (01 to 53)
S S SG
PowerDI is a registered trademark of Diodes Incorporated.
DMTH6010LPSQ
Document number: DS38161 Rev. 3 - 2
1 of 7 www.diodes.com
January 2019
© Diodes Incorporated
ADVANCED INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Continuous Drain Current (Notes 7 & 10)
Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH
TA = +25°C TA = +70°C TC = +25°C TC = +100°C
Symbol VDSS VGSS
ID
ID
IS IDM ISM IAS EAS
DMTH6010LPSQ
Value
Unit
60
V
±20
V
13.5 10.4
A
100 A
75
100
A
400
A
400
A
20
A
20
mJ
Thermal Characteristics
Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range
TA = +25°C TC = +25°C
Symbol PD RθJA PD RθJC
TJ, TSTG
Value 2.6 57 136 1.1
-55 to +175
Unit W
°C/W W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8)
Symbol Min
BVDSS
60
IDSS
—
IGSS
—
Typ
Max
Unit
Test Condition
—
—
V VGS = 0V, ID = 1mA
—
1
μA VDS = 48V, VGS = 0V
—
±100
nA VGS = ±20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
VGS(TH)
1
—
RDS(ON)
—
VSD
—
—
3
6.4
8
8.3
12
0.8
1.2
Ciss
—
2,090
—
Coss
—
746
—
Crss
—
38.5
—
Rg
0.2
0.59
1.5
Qg
—
19.3
—
Qg
—
41.3
—
Qgs
—
6
—
Qgd
—
8.8
—
tD(ON)
—
5.7
—
tR
—
4.3
—
tD(OFF)
—
23.4
—
tF
—
9.7
—
tRR
—
35.4
—
QRR
—
38.2
—
V
VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A
V
VGS = 0V, IS = 20A
pF
VDS = 30V, VGS = 0V, f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1M.