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DMTH6010LPSQ Dataheets PDF



Part Number DMTH6010LPSQ
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMTH6010LPSQ DatasheetDMTH6010LPSQ Datasheet (PDF)

ADVANCED INFORMATION Green DMTH6010LPSQ 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) 8mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID TC = +25°C (Note 10) 100A 85A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Engine Management Systems  Body Control Electronics  DC-DC Converters PowerDI5060-8 Features  Rat.

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ADVANCED INFORMATION Green DMTH6010LPSQ 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) 8mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID TC = +25°C (Note 10) 100A 85A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Engine Management Systems  Body Control Electronics  DC-DC Converters PowerDI5060-8 Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: PowerDI®5060-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.097 grams (Approximate) Pin1 S D S D S D G D Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 5) Notes: Part Number Case Packaging DMTH6010LPSQ-13 PowerDI5060-8 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information DDDD H6010LS YY WW =Manufacturer’s Marking H6010LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 19 = 2019) WW = Week Code (01 to 53) S S SG PowerDI is a registered trademark of Diodes Incorporated. DMTH6010LPSQ Document number: DS38161 Rev. 3 - 2 1 of 7 www.diodes.com January 2019 © Diodes Incorporated ADVANCED INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 6) Continuous Drain Current (Notes 7 & 10) Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH TA = +25°C TA = +70°C TC = +25°C TC = +100°C Symbol VDSS VGSS ID ID IS IDM ISM IAS EAS DMTH6010LPSQ Value Unit 60 V ±20 V 13.5 10.4 A 100 A 75 100 A 400 A 400 A 20 A 20 mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range TA = +25°C TC = +25°C Symbol PD RθJA PD RθJC TJ, TSTG Value 2.6 57 136 1.1 -55 to +175 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Symbol Min BVDSS 60 IDSS — IGSS — Typ Max Unit Test Condition — — V VGS = 0V, ID = 1mA — 1 μA VDS = 48V, VGS = 0V — ±100 nA VGS = ±20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VGS(TH) 1 — RDS(ON) — VSD — — 3 6.4 8 8.3 12 0.8 1.2 Ciss — 2,090 — Coss — 746 — Crss — 38.5 — Rg 0.2 0.59 1.5 Qg — 19.3 — Qg — 41.3 — Qgs — 6 — Qgd — 8.8 — tD(ON) — 5.7 — tR — 4.3 — tD(OFF) — 23.4 — tF — 9.7 — tRR — 35.4 — QRR — 38.2 — V VDS = VGS, ID = 250μA mΩ VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A V VGS = 0V, IS = 20A pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1M.


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