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VT2060G, VFT2060G, VBT2060G, VIT2060G
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT2060G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT2060G
123
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VBT2060G
PIN 1
K
PIN 2
HEATSINK
VIT2060G
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package
2 x 10 A 60 V 100 A 0.63 V
150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
EAS IRRM VAC
Operating junction and storage temperature range
TJ, TSTG
VT2060G
VFT2060G VBT2060G 60 20 10 100
65
1.0
1500 - 55 to + 150
VIT2060G
UNIT V A
A mJ A V °C
Revision: 16-Aug-13
1 Document Number: 89133
For technical questions within your region:
[email protected],
[email protected],
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VT2060G, VFT2060G, VBT2060G, VIT2060G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage Instantaneous forward voltage per diode (1)
IR = 1.0 mA IF = 5 A IF = 10 A IF = 5 A IF = 10 A
Reverse current per diode (2)
VR = 60 V
TA = 25 °C TA = 25 °C
TA = 125 °C TA = 25 °C TA = 125 °C
VBR VF IR
60 (min.) 0.58 0.69 0.50 0.63 8.0
Notes
(1) Pulse test: 300 μs pulse .