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VT2060G Dataheets PDF



Part Number VT2060G
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VT2060G DatasheetVT2060G Datasheet (PDF)

www.vishay.com VT2060G, VFT2060G, VBT2060G, VIT2060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT2060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT2060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB p.

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www.vishay.com VT2060G, VFT2060G, VBT2060G, VIT2060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT2060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT2060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT2060G PIN 1 K PIN 2 HEATSINK VIT2060G 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 2 x 10 A 60 V 100 A 0.63 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current  (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM Non-repetitive avalanche energy  at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min EAS IRRM VAC Operating junction and storage temperature range TJ, TSTG VT2060G VFT2060G VBT2060G 60 20 10 100 65 1.0 1500 - 55 to + 150 VIT2060G UNIT V A A mJ A V °C Revision: 16-Aug-13 1 Document Number: 89133 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VT2060G, VFT2060G, VBT2060G, VIT2060G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Breakdown voltage Instantaneous forward voltage per diode (1) IR = 1.0 mA IF = 5 A IF = 10 A IF = 5 A IF = 10 A Reverse current per diode (2) VR = 60 V TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VBR VF IR 60 (min.) 0.58 0.69 0.50 0.63 8.0 Notes (1) Pulse test: 300 μs pulse .


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