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VIT10202C-M3 Dataheets PDF



Part Number VIT10202C-M3
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VIT10202C-M3 DatasheetVIT10202C-M3 Datasheet (PDF)

VT10202C-M3, VBT10202C-M3, VIT10202C-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TMBS ® TO-220AB VT10202C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K TO-262AA K FEATURES • Trench MOS Schottky technology generation 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperat.

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VT10202C-M3, VBT10202C-M3, VIT10202C-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TMBS ® TO-220AB VT10202C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K TO-262AA K FEATURES • Trench MOS Schottky technology generation 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 2 1 VBT10202C PIN 1 K PIN 2 HEATSINK 3 2 1 VIT10202C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 200 V IFSM 100 A VF at IF = 5 A (TA = 125 °C) 0.65 V TJ max. Package 175 °C TO-220AB, TO-263AB, TO-262AA Diode variations Common cathode MECHANICAL DATA Case: TO-220AB, TO-263AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) per device per diode IF(AV) Maximum DC reverse voltage Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode VDC IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range dV/dt TJ, TSTG VT10202C VBT10202C 200 10 5 160 100 10 000 -40 to +175 VIT10202C UNIT V A V A V/μs °C Revision: 24-Apr-14 1 Document Number: 87796 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT10202C-M3, VBT10202C-M3, VIT10202C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Instantaneous forward voltage per diode (1) IF = 2.5 A IF = 5 A IF = 2.5 A IF = 5 A Reverse current per diode (2) VR = 160 V VR = 200 V TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VF IR Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms TYP. 0.74 0.80 0.58 0.65 0.2 0.4 1.0 MAX. - 0.88 - 0.73 - 150 5 UNIT V μA mA μA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT10202C VBT10202C Typical thermal resistance per diode per device per device RJC RJC RJA (1)(2) 3.4 2.2 52 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, without heatsink VIT10202C UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-220AB VT10202C-M3/4W 1.89 TO-263AB VBT10202C-M3/4W 1.38 TO-263AB VBT10202C-M3/8W 1.38 TO-262AA VIT10202C-M3/4W 1.46 PACKAGE CODE 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tape and reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Average Power Loss (W) 12 10 RthJA=RthJC=2.2oC/W 8 6 TA , RthJA=52oC/W 4 2 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve (D = Duty Cycle = 0.5) 4.5 D = 0.8 4 D = 0.5 D = 0.3 3.5 D = 0.2 D = 1.0 3 D = 0.1 2.5 2 1.5 T 1 0.5 0 0 D = tp/T 1234 Average Forward Current (A) tp 5 6 Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 24-Apr-14 2 Document Number: 87796 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT10202C-M3, VBT10202C-M3, VIT10202C-M3 www.vishay.com Vishay General Semiconductor Instantaneous Forward Current (A) 100 TA = 175 °C TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (uA) 100000 10000 1000 100 TA = 175 °C TA = 150 °C TA = 125 °C TA = 100 °C 10 1 TA = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typ.


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