VT10202C-M3, VBT10202C-M3, VIT10202C-M3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TMBS ®
TO-220AB
VT10202C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB K
TO-262AA K
FEATURES • Trench MOS Schottky technology generation 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
2 1
VBT10202C
PIN 1
K
PIN 2
HEATSINK
3 2 1 VIT10202C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VRRM
200 V
IFSM
100 A
VF at IF = 5 A (TA = 125 °C)
0.65 V
TJ max. Package
175 °C
TO-220AB, TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
per device per diode
IF(AV)
Maximum DC reverse voltage
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
VDC IFSM
Voltage rate of change (rated VR) Operating junction and storage temperature range
dV/dt TJ, TSTG
VT10202C
VBT10202C 200 10 5 160
100
10 000 -40 to +175
VIT10202C
UNIT V
A
V A V/μs °C
Revision: 24-Apr-14
1 Document Number: 87796
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10202C-M3, VBT10202C-M3, VIT10202C-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode (1)
IF = 2.5 A IF = 5 A IF = 2.5 A IF = 5 A
Reverse current per diode (2)
VR = 160 V VR = 200 V
TA = 25 °C
TA = 125 °C
TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
VF IR
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms
TYP. 0.74 0.80 0.58 0.65 0.2 0.4
1.0
MAX. -
0.88 -
0.73 -
150 5
UNIT
V
μA mA μA mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT10202C
VBT10202C
Typical thermal resistance
per diode per device per device
RJC RJC RJA (1)(2)
3.4 2.2 52
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, without heatsink
VIT10202C
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT10202C-M3/4W
1.89
TO-263AB
VBT10202C-M3/4W
1.38
TO-263AB
VBT10202C-M3/8W
1.38
TO-262AA
VIT10202C-M3/4W
1.46
PACKAGE CODE 4W 4W 8W 4W
BASE QUANTITY 50/tube 50/tube 800/reel 50/tube
DELIVERY MODE Tube Tube
Tape and reel Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A) Average Power Loss (W)
12
10 RthJA=RthJC=2.2oC/W
8
6
TA , RthJA=52oC/W
4
2
0 0 25 50 75 100 125 150 175
Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
4.5 D = 0.8
4 D = 0.5
D = 0.3
3.5
D = 0.2
D = 1.0
3 D = 0.1
2.5
2 1.5 T
1
0.5
0 0
D = tp/T
1234
Average Forward Current (A)
tp 5
6
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 24-Apr-14
2 Document Number: 87796
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT10202C-M3, VBT10202C-M3, VIT10202C-M3
www.vishay.com
Vishay General Semiconductor
Instantaneous Forward Current (A)
100 TA = 175 °C
TA = 150 °C 10 TA = 125 °C
TA = 100 °C 1 TA = 25 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Instantaneous Reverse Current (uA)
100000
10000 1000 100
TA = 175 °C TA = 150 °C TA = 125 °C TA = 100 °C
10
1
TA = 25 °C 0.1
0.01 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typ.