VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier ...
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AB
TMBS ®
ITO-220AB
VT10200C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT10200C
123
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-220AB and TO-262AA package) Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VBT10200C
PIN 1
K
PIN 2
HEATSINK
VIT10200C
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max.
Package
2 x 5.0 A 200 V 80 A 0.65 V 150 °C
TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATI...
