BMS4007

Ordering number : ENA1820 BMS4007 N-Channel Power MOSFET 75V, 60A, 7.8mΩ, TO-220ML(LS) http://onsemi.com Features ON-resistance RDS(on)=6mΩ (typ.) Input capacitance Ciss=9700pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV Note :*1 VDD=48V, L=100μH, IAV=48A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 75 ±20 60 240 2.0 30 150 --55 to +150 299 48 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7525-002 10.0 3.2 4.5 2.8 Product & Package Information Package : TO-220ML(LS) JEITA, JEDEC : SC-67, SOT-186A Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine Marking Electrical Connection 2 2.4 3.5 16.0 7.2 14.0 3.6 1.6 1.2 0.75 123 2.55 2.55 0.7 1 : Gate 2 : Drain 3 : Source TO-220ML(LS) MS4007 LOT No. 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 82510QA TK IM TC-00002454 No. A1820-1/5 BMS4007 Elec...