DMT6010LSS

ADAVDAVNACNECDEI INNNFEFOWORRPMRMAOATIDTIOUONCNT DMT6010LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) max 8mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID max TA = 25°C 14.0A 11.5A Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.  Backlighting  Power Management Functions  DC-DC Converters Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (Approximate) SO-8 Top View SD SD SD GD Top View Internal Schematic D G S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMT6010LSS-13 Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.dio...