N-Channel MOSFET
DMN63D1LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRNOEDWUCPTRODUCT
Product Summary
V(BR)DSS 60V
RDS(ON) max
2Ω ...
Description
DMN63D1LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRNOEDWUCPTRODUCT
Product Summary
V(BR)DSS 60V
RDS(ON) max
2Ω @ VGS = 10V 3Ω @ VGS = 5V
ID max TA = +25°C
250mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor Control Power Management Functions
SOT363
G1
Features
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363 Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate)
D1 D2
D2 G1 S1
G2
ESD Protected Gate
Top View
Gate Protection Diode
S1
Gate Protection Diode
S2
Q1 N-Channel
Q2 N-Channel
Equivalent Circuit
S2 G2 D1
Top View Pin out
Ordering Information (Note 4)
Notes:
Part Number DMN63D1LDW-7 DMN63D1LDW-13
Case SOT363 SOT363
Packaging 3000/Tape & Reel 1...
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