DMN5L06DMKQ

NEW PRODUCT DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) max 2.0Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V 3.0Ω @ VGS = 1.8V ID max TA = +25°C 305mA 280mA 265mA Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions Mechanical Data  Case: SOT-26  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020C  Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3  Weight: 0.015 grams (Approximate) SOT-26 D2 G1 S1 ESD protected up 2kV TOP VIEW BOTTOM VIEW S2 G2 D1 TOP VIEW Internal Schematic Ordering Information (Note 5) Notes: Part Number DMN5L06DMKQ-7 Case SOT-26 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead...