DMN53D0LQ
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 50V
RDS(ON)
1.6Ω @ VGS = 10V 2.5Ω ...
DMN53D0LQ
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Product Summary
BVDSS 50V
RDS(ON)
1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V
ID TA = +25°C
500mA 200mA
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
SOT23
Features and Benefits
Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMN53D0LQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Package: SOT23 Package Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate)
D
ESD Protected
Top View
G
S
Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN53D0LQ-7 DMN53D0LQ-13
Package
SOT23 SOT23
Qty. 3,000 10,000
Packing Carrier
Tape & Reel Tape &...