PHPT60415NY

PHPT60415NY 40 V, 15 A NPN high power bipolar transistor 27 May 2015 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp ≤ 1 ms collector-emitter saturation resistance IC = 15 A; IB = 1.5 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed Min Typ Max Unit - - 40 V - - 15 A - - 30 A - 28 40 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PHPT60415NY 40 V, 15 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline mb 1234 LFPAK56; PowerSO8 (SOT669) Graphic symbol C B E sym123 6. Ordering information Table 3. Ordering information Type number Pa...