PHE13005X

PHE13005X Silicon diffused power transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated, NPN power switching transistor in a full pack plastic package for use in high frequency electronic lighting ballast applications 1.2 Features and benefits „ Fast switching „ High voltage capability of 700 V „ Isolated package „ Low thermal resistance 1.3 Applications „ Electronic lighting ballasts 1.4 Quick reference data Table 1. Quick reference Symbol Parameter IC collector current Ptot total power dissipation VCESM collector-emitter peak voltage Static characteristics hFE DC current gain Conditions DC; see Figure 3, 1 and 2 Th ≤ 25 °C; see Figure 4 VBE = 0 V IC = 1 A; VCE = 5 V; Th = 25 °C; see Figure 11 VCE = 5 V; IC = 2 A; Th = 25 °C; see Figure 11 Min Typ Max Unit - - 4A - - 26 W - - 700 V 12 20 40 10 17 28 NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1B base 2C collector 3E emitter mb n.c. isolated PHE13005X Silicon diffused power transistor Simplified outline mb Graphic symbol C B E sym123 3. Ordering information 123 SOT186A (TO-220F) Table 3. Ordering information Type number Package Name Description PHE13005X TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" Version SOT186A PHE13005X_2 Product data sheet Rev. 02 — 20 November 2009 © NXP B.V. 2009. Al...