IRG7PG35UPbF IRG7PG35U-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead-free package
C
G E
n-channel C
VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175...