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IRG7PG35UPBF Dataheets PDF



Part Number IRG7PG35UPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG7PG35UPBF DatasheetIRG7PG35UPBF Datasheet (PDF)

  IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Tight parameter distribution  Lead-free package  C G E n-channel  C   VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C VCE(ON) typ. = 1.9V@ IC = 20A C Benefits  High efficiency in a wide range of applications  Suitable for a wide range of switching fr.

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  IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Tight parameter distribution  Lead-free package  C G E n-channel  C   VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C VCE(ON) typ. = 1.9V@ IC = 20A C Benefits  High efficiency in a wide range of applications  Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation Applications  U.P.S.   Welding   Solar Inverter   Induction heating  GCE IRG7PG35UPbF TO-247AC GC E IRG7PG35U-EPbF TO-247AD G Gate C Collector E Emitter Base part number Package Type Standard Pack Form Quantity Orderable Part Number IRG7PG35UPbF IRG7PG35U-EPbF TO-247AC TO-247AD Tube Tube 25 IRG7PG35UPbF 25 IRG7PG35U-EPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current (Silicon Limited) IC @ TC = 100°C Continuous Collector Current (Silicon Limited) ICM Pulse Collector Current, VGE = 15V  ILM Clamped Inductive Load Current, VGE = 20V  VGE Continuous Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw    Max. Units 1000 V 55 35 60 A 80 ±30 V 210 W 105 -55 to +175 °C 300 (0.063 in.(1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance Parameter RθJC (IGBT) Junction-to-Case (IGBT)  RθCS Case-to-Sink (flat, greased surface) RθJA Junction-to-Ambient (typical socket mount) 1 www.irf.com © 2014 International Rectifier Min. ––– ––– –––   Typ. ––– 0.24 –––   Max. 0.70 ––– 40   Units °C/W Submit Datasheet Feedback April 14, 2014   IRG7PG35UPbF/IRG7PG35U-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1000 — — V VGE = 0V, IC = 100µA  V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES   Gate Threshold Voltage Gate Threshold Voltage temp coefficient. Forward Transconductance Collector-to-Emitter Leakage Current   — — — — 3.0 — — — — 1.2 1.9 2.3 2.4 — -16 22 2.0 2000 — V/°C VGE = 0V, IC = 1.0mA (25°C-150°C) 2.2 IC = 20A, VGE = 15V, TJ = 25°C — V   IC = 20A, VGE = 15V, TJ = 150°C — IC = 20A, VGE = 15V, TJ = 175°C 6.0 V VCE = VGE, IC = 600µA — mV/°C VCE = VGE, IC = 600µA (25°C-150°C) — S VCE = 50V, IC = 20A, PW = 30µs 100 µA VGE = 0V, VCE = 1000V — VGE = 0V, VCE = 1000V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time — 85 — IC = 20A — 15 — nC  VGE = 15V — 35 —   VCC = 600V — 1060 — — 620 — µJ IC = 20A, VCC = 600V, VGE = 15V — 1680 — — 30 — RG = 10, L = 200µH, TJ = 25°C Energy losses include tail & diode — 15 — ns reverse recovery — 160 — Diode clamp the same as — 80 — IRG7PH35UDPbF Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance — 1880 — — 1140 — — 3020 — — 25 — — 20 — — 200 — — 200 — — 1940 — — 60 — — 40 — µJ IC = 20A, VCC = 600V, VGE = 15V RG = 10, L = 200µH, TJ = 175°C Energy losses include tail & diode ns reverse recovery Diode clamp the same as IRG7PH35UDPbF VGE = 0V pF VCC = 30V f = 1.0Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 175°C, IC = 80A VCC = 800V, Vp ≤ 1000V Rg = 10, VGE = +20V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, RG = 10.  Pulse width limited by max. junction temperature.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  R is measured at TJ of approximately 90°C. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014   IRG7PG35UPbF/IRG7PG35U-EPbF Load Current ( A ) 45 40 35 30 25 20 15 10 5 0 0.1 Square Wave: VCC I Diodeas specified 60 For both: Duty cycle : 50% Tj = 150°C Tc = 100°C Gate drive as specified Power Dissipation = 70W 1 10 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 250 100 50 200 40 150 30 20 100 Ptot (W) IC (A) 10 50 0 25 50 75 100 125 150 175 TC (°C) Fig. 2 - Maximum DC Collect.


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