Document
IRG7PG35UPbF IRG7PG35U-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead-free package
C
G E
n-channel C
VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C
VCE(ON) typ. = 1.9V@ IC = 20A
C
Benefits
High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low
VCE(on) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation
Applications
U.P.S. Welding Solar Inverter Induction heating
GCE
IRG7PG35UPbF TO-247AC
GC E
IRG7PG35U-EPbF TO-247AD
G Gate
C Collector
E Emitter
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRG7PG35UPbF IRG7PG35U-EPbF
TO-247AC TO-247AD
Tube Tube
25 IRG7PG35UPbF 25 IRG7PG35U-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
1000
V
55
35 60
A
80
±30 V
210 W
105
-55 to +175
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RθJC (IGBT) Junction-to-Case (IGBT)
RθCS
Case-to-Sink (flat, greased surface)
RθJA Junction-to-Ambient (typical socket mount)
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Min. ––– ––– –––
Typ. ––– 0.24 –––
Max. 0.70 ––– 40
Units
°C/W
Submit Datasheet Feedback
April 14, 2014
IRG7PG35UPbF/IRG7PG35U-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1000
—
—
V VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES
Gate Threshold Voltage Gate Threshold Voltage temp coefficient. Forward Transconductance Collector-to-Emitter Leakage Current
— — — — 3.0 — — — —
1.2 1.9 2.3 2.4 — -16 22 2.0 2000
— V/°C VGE = 0V, IC = 1.0mA (25°C-150°C) 2.2 IC = 20A, VGE = 15V, TJ = 25°C — V IC = 20A, VGE = 15V, TJ = 150°C — IC = 20A, VGE = 15V, TJ = 175°C 6.0 V VCE = VGE, IC = 600µA — mV/°C VCE = VGE, IC = 600µA (25°C-150°C) — S VCE = 50V, IC = 20A, PW = 30µs 100 µA VGE = 0V, VCE = 1000V — VGE = 0V, VCE = 1000V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf
Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time
— 85 —
IC = 20A
— 15 — nC VGE = 15V
— 35 —
VCC = 600V
— 1060 —
— 620 — µJ IC = 20A, VCC = 600V, VGE = 15V
— 1680 — — 30 —
RG = 10, L = 200µH, TJ = 25°C Energy losses include tail & diode
— 15 — ns reverse recovery
— 160 —
Diode clamp the same as
— 80 —
IRG7PH35UDPbF
Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres
Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance
— 1880 — — 1140 — — 3020 — — 25 — — 20 — — 200 — — 200 — — 1940 — — 60 — — 40 —
µJ IC = 20A, VCC = 600V, VGE = 15V RG = 10, L = 200µH, TJ = 175°C Energy losses include tail & diode
ns reverse recovery Diode clamp the same as IRG7PH35UDPbF
VGE = 0V pF VCC = 30V
f = 1.0Mhz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 175°C, IC = 80A VCC = 800V, Vp ≤ 1000V
Rg = 10, VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90°C.
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Submit Datasheet Feedback
April 14, 2014
IRG7PG35UPbF/IRG7PG35U-EPbF
Load Current ( A )
45 40 35 30 25 20 15 10
5 0
0.1
Square Wave: VCC
I
Diodeas specified
60
For both: Duty cycle : 50% Tj = 150°C Tc = 100°C Gate drive as specified Power Dissipation = 70W
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
250
100
50 200
40 150
30
20 100
Ptot (W)
IC (A)
10 50
0 25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Maximum DC Collect.