PD - 95187
IRG4PH40UPbF
INSULATEDGATEBIPOLARTRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies u...
PD - 95187
IRG4PH40UPbF
INSULATEDGATEBIPOLAR
TRANSISTOR
Features
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
Optimized for power conversion; SMPS, UPS and welding
Industry standard TO-247AC package Lead-Free
Benefits
Higher switching frequency capability than competitive IGBTs
Highest efficiency available Much lower conduction losses than MOSFETs More efficient than short circuit rated IGBTs
C
G E
n-channel
Ultra Fast Speed IGBT
VCES = 1200V VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC RθCS RθJA Wt
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
www.irf.com
TO-247AC
Max. 1200
41 21 82 82 ± 20 270 160 65 -55 to + 150
300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm)
Units V A
V mJ W
°C...